3 edition of Defects in Optoelectronic Materials (Optoelectronic Properties of Semiconductors and Superlattices, 11) found in the catalog.
November 6, 2001
Written in English
|The Physical Object|
|Number of Pages||379|
Optoelectronic Materials and Device Concepts (SPIE Press Monograph Vol. PM05) by Manijeh Razeghi (Author, Editor) ISBN ISBN Why is ISBN important? ISBN. This bar-code number lets you verify that you're getting exactly the right version or edition of a book. Format: Paperback. Book Title Zinc Oxide - A Material for Micro- and Optoelectronic Applications Book Subtitle Proceedings of the NATO Advanced Research Workshop on Zinc Oxide as a Material for Micro- and Optoelectronic Applications, held in St. Petersburg, Russia, from 23 to 25 June Editors. Norbert H. Nickel; Evgenii Terukov; Series Title Nato Science.
Book Description: Provides a semi-quantitative approach to recent developments in the study of optical properties of condensed matter systems Featuring contributions by noted experts in the field of electronic and optoelectronic materials and photonics, this book looks at the optical properties of materials as well as their physical processes and various classes. Halide perovskite solar cells (PSCs) have been materialized as a hotspot in the next-generation photovoltaic technology due to their low-cost manufacturing process and high-efficiency characteristics. However, the defects within the bulk or in the grain boundaries and surface hinder ambipolar charge transpor Journal of Materials Chemistry A Recent Review Articles.
Optoelectronic Devices Failure Mechanisms and Anomalies Light Sources Light sources (optoelectronic semiconductors) have failure modes and concerns defects in the materials used in the laser diode or the fabrication process from which it is made, and from moisture. Get this from a library! Insulating materials for optoelectronics: new developments. [F Agulló-López;] -- This review volume presents new developments in the preparation, physical characterization and applications of insulating materials for Optoelectronics. Insulators occupy a leading position as laser.
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Defects in Optoelectronic Materials (Optoelectronic Properties of Semiconductors and Superlattices) 1st Edition by Kazumi Wada (Author) ISBN ISBN Why is ISBN important. ISBN. This bar-code number lets you verify that you're getting exactly the right version or edition of a book. The digit and digit Cited by: 6.
Book Description. Defects in Optoelectronic Materials bridges the gap between device process engineers and defect physicists by describing current problems in device processing and current understanding of these defects based on defect physics.
Optoelectronic Devices and Materials 3 Light-Emitting Diodes and Semiconductor Lasers P a r tD|. keep the thickness of each layer below h c.A s t h es t r a i n.
In the past decade, halide perovskite materials have captivated a great deal of attention for the application in optoelectronic devices.
To realize the commercialization of optoelectronic devices made from this exhilarating material system, in particular to boost the efficiency and the stability, the formation mechanisms of defects, their impact on device performance and lifetime and the way Author: Xiaoxuan Chen, Shijia Cheng, Lian Xiao, Handong Sun.
Research advances in III-nitride semiconductor materials and device have led to an exponential increase in activity directed towards electronic and optoelectronic applications. There is also great scientific interest in this class of materials because they appear to form the first semiconductor system in which extended defects do not severely.
Purchase Semiconductor Materials for Optoelectronics and LTMBE Materials, Volume 40 - 1st Edition. Print Book & E-Book. ISBNReliability of Semiconductor Lasers and Optoelectronic Devices simplifies complex concepts of optoelectronics reliability through a focus on case studies and structured methods.
The book provides a brief look at the fundamentals of laser diodes and presents real world case studies that discuss the principles of reliability and what occurs when rules are broken.
The emergence of new materials has opened the doors to nano-electronic and optoelectronic devices with new or improved capabilities.
For example, III-V based alloys have transformed the LED industry seeking applications in high power electronics, and may accelerate micro-electronic devices in the near future. This book presents a key reference for materials scientists, engineers and professionals working in R&D in the area of semiconductors and optoelectronics.
Show less Mid-infrared Optoelectronics: Materials, Devices, and Applications addresses the new materials, devices and applications that have emerged over the last decade, along with exciting. Two-dimensional (2D) materials display unique properties that could be useful for many applications ranging from electronics and optoelectronics to catalysis and energy storage.
Entropically necessary defects are inevitably present in 2D materials in the form of vacancies and grain boundaries. Additional defects, such as dopants, may be intentionally introduced to tune the electronic structure. ISBN: OCLC Number: Description: pages: illustrations ; 23 cm.
Contents: Defects in Device Fabrication Saturation of Free Carrier Concentration in Semiconductors / W. Walukiewicz Point of Defect Formation Near Surfaces / K. Wada Optical Characterization of Plasma Etching Induced Damage / E.L. Hu and C.-H. Chen Book Description. Each chapter in this book is written by a group of leading experts in one particular type of microprobe technique.
They emphasize the ability of that technique to provide information about small structures (i.e. quantum dots, quantum lines), microscopic defects, strain, layer composition, and its usefulness as diagnostic technique for device degradation. This book covers the combined subjects of organic electronic and optoelectronic materials/devices.
It is designed for classroom instruction at the senior college level. Highlighting emerging organic and polymeric optoelectronic materials and devices, it presents the fundamentals, principle mechanisms, representative examples, and key data. A single crystal of lithium niobate is an important optoelectronic material.
It can be grown from direct melt only in a lithium deficient non-stoichiometric form as its stoichiometric composition exhibits incongruent melting. As a result it contains a number of intrinsic point defects such as Li-vacancies, Nb antisites, oxygen vacancies, as well as different types of polarons and bipolarons.
Layered black phosphorus (BP), a promising 2D material, tends to oxidize under ambient conditions. While such defective BP is typically considered undesirable, defect engineering has in fact been exploited in contemporary materials to create new behaviors and functionalities.
In this work, the structural, optoelectronic, and defect properties of both the α-phase and β-phase CsPbI 2 Br are investigated based on first-principles calculations.
First, we calculate the bandgap of α-CsPbI 2 Br using the standard HSE06 method which is in accordance with the experimental bandgap value of eV. We also find that α-CsPbI 2 Br shows comparable optoelectronic properties.
We report a study of defects in some optoelectronic material of technological interest using a scanning acoustic microscope (SAM). Acoustic micrographs of InP, CdTe, and InGaAsP were compared with defect maps obtained by etching, cathodoluminescence (CL), or photoluminescence. Inclusions in InGaAsP were visible using the SAM.
However, at low acoustic powers dislocations in InP and CdTe. Because of its thickness‐dependent direct bandgap and exceptional optoelectronic properties, indium(III) selenide (In 2 Se 3) has emerged as an important semiconductor for electronics and r, the scalable synthesis of defect‐free In 2 Se 3 flakes remains a significant barrier for its practical applications.
Here, a facile electrochemical strategy is presented for. Each chapter in this book is written by a group of leading experts in one particular type of microprobe technique.
They emphasize the ability of that technique to provide information about small structures (i.e. quantum dots, quantum lines), microscopic defects, strain, layer composition, and its usefulness as diagnostic technique for device degradation. Optoelectronics - Advanced Materials and Devices is a second edition following the initial Optoelectronics - Materials and Techniques book published in as part of the InTech collection of international works on optoelectronics.
Optoelectronics, as the discipline devoted to the study and application of electronic devices that emit, detect, and otherwise control light, has widely. The An term is due to recombination at defects and is considered to be negligible in high-quality material.
It does however make significant contributions to some laser materials, most notably InGaAsN/GaAs where it can account for up to 50 % of I th even in the best μm devices [ ].Books Optoelectronic Properties of Semiconductors and Superlattices.
Series Editor: Dr. Omar Manasreh. This book series is published by Taylor and Francis and it contains 21 volumes. Volume 1: “Long Wavelength Infrared Detectors. Volume “Defects in Optoelectronic Materials.We report the new observation that the crack formation mechanism in a laser-welded Au-coated optoelectronic material is due to the existence of P-containing underlayer and is not due to the thickness of the Au plating layer.
Therefore, to solve the problem of crack formation in laser-welded Au-coated optoelectronic materials, it is strongly recommended that a Ni underlayer with P-free.